SSDM2014
TOKYO - Thursday, September 11th 2014 [ME NewsWire]
(BUSINESS
WIRE) Toshiba Corporation (TOKYO:6502) today announced the development
of Tunneling Field Effect Transistors (TFET) that utilize a new
operating principle for ultra-low power MCU. This principle has been
applied to the development of two different TFET using a CMOS platform
compatible process. By applying each TFET into some circuit blocks, it
is possible to achieve significant power reductions in MCUs.
Toshiba
presented the TFETs on September 9th and 10th in three presentations at
the 2014 Solid State Devices and Materials (SSDM) in Tsukuba, Japan.
Two presentations were based on joint research with the Collaborative
Research Team Green Nanoelectronics Center (GNC) at the National
Institute of Advanced Industrial Science and Technology (AIST).
Rapid
demand growth for wireless and mobile devices is driving demand for
ultra-low power consumption of LSI. In this situation, innovative
devices are strongly required to reduce operation voltage and stand-by
leakage current. Tunneling Field Effect Transistor (TFET) utilizing
operation novel principle with quantum tunneling effect has attracted
much attention to achieve the ultra-low power LSI operation instead of
conventional MOSFETs.
Recently, the introduction of new
materials, such as III-V compound semiconductors, has been widely
investigated for TFET, as they have the potential to realize high
performance. However, it is difficult to implement such materials into
current CMOS platforms, due to the difficulties resulting from special
process utilization.
Toshiba has addressed this problem
by optimizing TFET properties for some of key circuit blocks using
common CMOS process. This approach enables simple installation of TFET
into existing production line. Toshiba has developed two types of Si
based TFET, one for logic circuits with ultra-low leakage current and
optimized ON current, the other for SRAM circuits with extremely low
transistor characteristics variation. Both utilize vertical type
tunneling operation to enhance tunneling properties. In addition, the
logic TFET employs precisely controlled epitaxial material growth
process for tunnel junction formation with carbon and phosphorus doped
Si. The Si/SiGe hetero junction has also been comprehensively evaluated
to secure optimized configuration. Consequently, the device achieves an
ON current two orders of magnitude higher than a Si TFET, which keeps
same ultra-low OFF current, both in N and P-type TFET. For the SRAM type
TFET development, Toshiba has proposed novel TFET operation
architecture which doesn’t need to form a structural tunnel junction. It
eliminates process variability and results in significantly suppressed
transistor characteristics variation.
Toshiba is going
to demonstrate integrating these TFET with conventional MOSFETs in a MCU
to reduce total power consumption by one-tenth or more, targeting
commercial production and use by 2017.
About Toshiba
Toshiba
Corporation, a Fortune 500 company, channels world-class capabilities
in advanced electronic and electrical product and systems into five
strategic business domains: Energy & Infrastructure, Community
Solutions, Healthcare Systems & Services, Electronic Devices &
Components, and Lifestyles Products & Services. Guided by the
principles of The Basic Commitment of the Toshiba Group, “Committed to
People, Committed to the Future”, Toshiba promotes global operations
towards securing “Growth Through Creativity and Innovation”, and is
contributing to the achievement of a world in which people everywhere
live in safe, secure and comfortable society.
Founded
in Tokyo in 1875, today’s Toshiba is at the heart of a global network of
over 590 consolidated companies employing over 200,000 people
worldwide, with annual sales surpassing 6.5 trillion yen (US$63
billion). To find out more about Toshiba, visit
www.toshiba.co.jp/index.htm
Contacts
Toshiba Corporation
Semiconductor & Storage Products Company
Megumi Genchi / Kota Yamaji, +81-3-3457-3576
Communication IR Promotion Group
Business Planning Division
semicon-NR-mailbox@ml.toshiba.co.jp
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