Contributes to performance improvement of smartphones by using new generation “TaRF6” process
TOKYO. - Thursday, September 11th 2014 [ME NewsWire]
(BUSINESS WIRE) Toshiba Corporation
(TOKYO:6502) today announced that it has developed SP12T[1] RF antenna
switch ICs for smartphones supporting LTE-Advanced that achieve the
lowest-level insertion loss[2,4] and RF distortion[3,4] in the industry.
Sample shipment starts from today.
With the spread of mobile communications, the number of RF bands and
data speed rates is increasing dramatically. Requirements for antenna
switch ICs, which are used in the RF circuits of mobile devices, are
leaning towards multi-port and improvements to RF performance, including
insertion loss and linearity. In addition, in order to meet the drastic
growth of high data rate mobile communication devices in emerging
markets, it is necessary to achieve these RF performance improvements in
a cost-effective method.
In responding to these requirements, Toshiba has developed “TaRF6”, a
new generation TarfSOITM (Toshiba advanced RF SOI) [5] process using
silicon-on-insulator (SOI) technology[6]. TarfSOITM achieves integration
of analog, digital and RF circuits on a single chip. Compared to other
conventional solutions, such as GaAs, it delivers a cost-effective
solution that supports highly complex switching functions and RF
performance.
With the new “TaRF6” process, MOSFETs customized for RF switch
applications have been developed and used in the new SP12T RF antenna
switch IC, leading to a performance of 0.42dB in insertion loss
(f=2.7GHz) and -90dBm in second harmonic distortion[7]. Compared to
products using the previous “TaRF5” process, there is a 0.26dB
improvement in insertion loss (f=2.7GHz) and 18dB improvement in second
harmonic distortion. The lower insertion loss can contribute to low
power consumption of smartphones, while the lower distortion can
contribute to the development of carrier aggregation[8] smartphones that
require low distortion.
Toshiba will expand the product line-up using the “TaRF6” process
with low insertion loss and low distortion by the end of the year, to
meet the requirements for multi-port and complex functions demanded in
LTE now being implemented worldwide, and LTE-Advanced[9] expected to
follow. Furthermore, Toshiba is considering offering SOI foundry
services using TarfSOITM technology.
Notes |
||
[1] |
Single Pole Twelve Throw Switch |
|
[2] |
The loss of electric power that occurs when current goes from one
terminal to another in a radio frequency circuit, expressed in decibels. |
|
[3] |
Unnecessary frequency components that appear in the output signal
when current goes from one terminal to another in a radio frequency
circuit. |
|
[4] |
In the RF antenna switch market as of September 10, 2014. Toshiba survey. |
|
[5] |
TarfSOITM is a trademark of Toshiba Corporation. |
|
[6] |
The technology forms an insulation film under the channel of the
MOSFET and reduces stray capacity to improve speed and power saving of
the CMOS LSI. |
|
[7] |
Distortion component with twice the frequency. |
|
[8] |
A technique to increase the transmission data rate using multiple
frequency carriers simultaneously. The smaller harmonic performance is
required for this application to avoid the degradation of receiving
performance by the harmonics component which overlaps on the receiver
band. |
|
[9] |
A new communication standard developed by the 3GPP standard
development organization. One of the fourth generation mobile
communication systems defined by the ITU. |
|
Follow this link for more on Toshiba RF antenna switch ICs. http://www.semicon.toshiba.co.jp/eng/product/rf/rf_sw/index.html
Customer Inquiries: Small Signal Device Sales & Marketing Department Tel: +81-3-3457-3411
Information in this document, including product prices and
specifications, content of services and contact information, is current
on the date of the announcement but is subject to change without prior
notice.
About Toshiba
Toshiba Corporation, a Fortune Global 500 company, channels
world-class capabilities in advanced electronic and electrical product
and systems into five strategic business domains: Energy &
Infrastructure, Community Solutions, Healthcare Systems & Services,
Electronic Devices & Components, and Lifestyles Products &
Services. Guided by the principles of The Basic Commitment of the
Toshiba Group, “Committed to People, Committed to the Future”, Toshiba
promotes global operations towards securing “Growth Through Creativity
and Innovation”, and is contributing to the achievement of a world in
which people everywhere live in safe, secure and comfortable society.
Founded in Tokyo in 1875, today’s Toshiba is at the heart of a global
network of over 590 consolidated companies employing over 200,000
people worldwide, with annual sales surpassing 6.5 trillion yen (US$63
billion). To find out more about Toshiba, visit www.toshiba.co.jp/index.htm
Photos/Multimedia Gallery Available: http://www.businesswire.com/multimedia/home/20140910005352/en
Contacts
Media Inquiries:
Toshiba Corporation
Semiconductor & Storage Products Company
Koji Takahata, +81-3-3457-4963
semicon-NR-mailbox@ml.toshiba.co.jp
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